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公开(公告)号：US11846860B2
公开(公告)日：2023-12-19
申请号：US18164809
申请日：2023-02-06
申请人： Japan Display Inc.
IPC分类号： G02F1/1362 , G02F1/1368 , H01L29/786 , H10K50/86 , H10K59/131
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136277 , G02F1/136286 , H01L29/78633 , H01L29/78672 , H10K50/865 , H10K59/131
摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.
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公开(公告)号：US11640088B2
公开(公告)日：2023-05-02
申请号：US17159154
申请日：2021-01-27
申请人： Japan Display Inc.
发明人： Ryo Onodera , Hajime Watakabe , Akihiro Hanada
IPC分类号： G02F1/1362 , G02F1/1335 , G02F1/1368
摘要： A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.
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公开(公告)号：US12085823B2
公开(公告)日：2024-09-10
申请号：US17987887
申请日：2022-11-16
申请人： Japan Display Inc.
IPC分类号： G02F1/1362 , G02F1/1368 , H01L27/12 , H01L29/786 , H10K59/131
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , H01L27/124 , H01L29/78672 , H10K59/131 , G02F2201/123
摘要： A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
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公开(公告)号：US11894387B2
公开(公告)日：2024-02-06
申请号：US17747049
申请日：2022-05-18
申请人： Japan Display Inc.
发明人： Hajime Watakabe , Toshihide Jinnai , Ryo Onodera , Akihiro Hanada
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1285 , H01L29/66742 , H01L29/7869
摘要： There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.
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公开(公告)号：US11177388B2
公开(公告)日：2021-11-16
申请号：US16785662
申请日：2020-02-10
申请人： Japan Display Inc.
发明人： Hajime Watakabe , Tomoyuki Ito , Toshihide Jinnai , Isao Suzumura , Akihiro Hanada , Ryo Onodera
IPC分类号： H01L21/00 , H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L29/423 , H01L29/49 , H01L21/02 , H01L21/426 , H01L21/4757 , H01L21/4763 , H01L29/66 , G02F1/1368
摘要： A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.
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公开(公告)号：US12072595B2
公开(公告)日：2024-08-27
申请号：US18503351
申请日：2023-11-07
申请人： Japan Display Inc.
IPC分类号： G02F1/1368 , G02F1/1362 , H01L29/786 , H10K50/86 , H10K59/131
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136277 , G02F1/136286 , H01L29/78633 , H01L29/78672 , H10K50/865 , H10K59/131
摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.
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公开(公告)号：US11721765B2
公开(公告)日：2023-08-08
申请号：US17499908
申请日：2021-10-13
申请人： Japan Display Inc.
发明人： Hajime Watakabe , Tomoyuki Ito , Toshihide Jinnai , Isao Suzumura , Akihiro Hanada , Ryo Onodera
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L29/423 , H01L29/49 , H01L21/02 , H01L21/426 , H01L21/4757 , H01L21/4763 , H01L29/66 , G02F1/1368
CPC分类号： H01L29/78627 , H01L21/02178 , H01L21/02565 , H01L21/426 , H01L21/47573 , H01L21/47635 , H01L27/124 , H01L27/127 , H01L27/1225 , H01L27/1251 , H01L29/24 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78633 , H01L29/78675 , G02F1/1368 , H01L2029/42388
摘要： A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.
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公开(公告)号：US11630361B2
公开(公告)日：2023-04-18
申请号：US17471881
申请日：2021-09-10
申请人： Japan Display Inc.
IPC分类号： G02F1/1368 , G02F1/1362 , H01L29/786
摘要： A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.
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公开(公告)号：US11181792B2
公开(公告)日：2021-11-23
申请号：US16787054
申请日：2020-02-11
申请人： Japan Display Inc.
IPC分类号： G02F1/1362 , G02F1/1368 , H01L29/786 , H01L27/12 , H01L27/32
摘要： A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
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公开(公告)号：US12108627B2
公开(公告)日：2024-10-01
申请号：US17533127
申请日：2021-11-23
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Kentaro Miura , Hajime Watakabe , Ryo Onodera
IPC分类号： H01L27/32 , H01L51/56 , H10K59/121 , H10K59/126 , H10K71/00 , H01L27/12 , H01L29/786 , H10K59/12 , H10K59/123
CPC分类号： H10K59/1213 , H10K59/126 , H10K71/00 , H01L27/1225 , H01L27/1251 , H01L29/78618 , H01L29/78633 , H01L29/78675 , H01L29/7869 , H10K59/1201 , H10K59/123
摘要： A display device includes a first transistor having a first semiconductor layer, in which a first source region includes a first region in contact with a first source electrode, and a first drain region includes a second region in contact with a first drain electrode. The first source and drain regions, the first region, and the second region each include a first impurity element. In a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region. A method of manufacturing a display device includes forming a first gate electrode and a light shielding layer on a first insulating layer, and forming a second semiconductor layer on the light shielding layer.
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