Invention Grant
- Patent Title: Piezoelectric anti-stiction structure for microelectromechanical systems
-
Application No.: US16558539Application Date: 2019-09-03
-
Publication No.: US11365115B2Publication Date: 2022-06-21
- Inventor: Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
Public/Granted literature
- US20210061641A1 PIEZOELECTRIC ANTI-STICTION STRUCTURE FOR MICROELECTROMECHANICAL SYSTEMS Public/Granted day:2021-03-04
Information query