Invention Grant
- Patent Title: High purity SiOC and SiC, methods compositions and applications
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Application No.: US16825162Application Date: 2020-03-20
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Publication No.: US11365124B2Publication Date: 2022-06-21
- Inventor: Mark S. Land , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Douglas M. Dukes , Glenn Sandgren , Brian L. Benac
- Applicant: Pallidus, Inc.
- Applicant Address: US NY Albany
- Assignee: Pallidus, Inc.
- Current Assignee: Pallidus, Inc.
- Current Assignee Address: US NY Albany
- Agency: Belvis Law, LLC.
- Agent Glen P. Belvis
- Main IPC: C01B32/977
- IPC: C01B32/977 ; C01B32/956 ; C30B23/00 ; C30B23/02 ; C30B29/36 ; C30B29/06 ; H01L29/16 ; H01L29/66 ; H01L21/02 ; C04B35/56 ; C04B35/571 ; C08G77/20 ; C08G77/50 ; C08L83/04 ; C04B35/80 ; C08L83/00 ; C08G77/12 ; C08G77/00
Abstract:
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
Public/Granted literature
- US20210009430A1 High Purity SiOC and SiC, Methods Compositions and Applications Public/Granted day:2021-01-14
Information query
