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1.发明公开公开(公告)号：US20240190710A1
公开(公告)日：2024-06-13
申请号：US18214324
申请日：2023-06-26
申请人： Pallidus, Inc.
发明人： Mark S. Land
IPC分类号： C01B32/956 , C01B32/977 , C04B35/515 , C04B35/56 , C04B35/571 , C04B35/80 , C08G77/00 , C08G77/12 , C08G77/20 , C08G77/50 , C08L83/04 , C23C14/06 , C30B25/02 , C30B29/36
CPC分类号： C01B32/956 , C01B32/977 , C04B35/515 , C04B35/56 , C04B35/5603 , C04B35/571 , C04B35/80 , C08G77/20 , C08G77/50 , C08L83/04 , C23C14/0635 , C30B25/02 , C30B29/36 , C04B2235/3418 , C04B2235/3826 , C04B2235/3895 , C04B2235/44 , C04B2235/48 , C04B2235/483 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/6581 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96 , C08G77/12 , C08G77/80
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
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公开(公告)号：US20220162128A1
公开(公告)日：2022-05-26
申请号：US17329001
申请日：2021-05-24
申请人： Pallidus, Inc.
发明人： Douglas M. Dukes , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Glenn Sandgren , Mark S. Land , Brian L. Benac
IPC分类号： C04B35/80 , C04B35/56 , C04B35/571 , C04B35/64 , C08G77/20 , C04B35/515 , C08L83/04 , C08G77/50 , C01B32/907
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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公开(公告)号：US20210009430A1
公开(公告)日：2021-01-14
申请号：US16825162
申请日：2020-03-20
申请人： Pallidus, Inc.
发明人： Mark S. Land , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Douglas M. Dukes , Glenn Sandgren , Brian L. Benac
IPC分类号： C01B32/956 , C30B23/00 , C30B23/02 , C30B29/36 , C30B29/06 , H01L29/16 , H01L29/66 , H01L21/02 , C04B35/56 , C04B35/571 , C08G77/20 , C08G77/50 , C08L83/04 , C01B32/977 , C08L83/00
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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公开(公告)号：US20180201546A1
公开(公告)日：2018-07-19
申请号：US15924141
申请日：2018-03-16
申请人： Pallidus, Inc.
发明人： Mark S. Land , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Douglas M. Dukes , Glenn Sandgren , Brian L. Benac
IPC分类号： C04B35/571 , C08L83/04 , C01B32/956 , C08L83/00 , C04B35/56 , C04B35/80 , C08G77/20 , C08G77/00 , C08G77/12
CPC分类号： C04B35/571 , C01B32/956 , C04B35/56 , C04B35/5603 , C04B35/806 , C04B2235/3418 , C04B2235/3826 , C04B2235/44 , C04B2235/48 , C04B2235/483 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/6581 , C04B2235/72 , C04B2235/721 , C04B2235/727 , C04B2235/77 , C04B2235/785 , C04B2235/94 , C04B2235/96 , C08G77/12 , C08G77/20 , C08G77/50 , C08G77/80 , C08L83/00 , C08L83/04
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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公开(公告)号：US12030819B2
公开(公告)日：2024-07-09
申请号：US17367380
申请日：2021-07-04
申请人： Pallidus, Inc.
发明人： Douglas M. Dukes , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Glenn Sandgren , Mark S. Land , Brian L. Benac
IPC分类号： C01B32/956 , C01B32/977 , C04B35/515 , C04B35/56 , C04B35/571 , C04B35/80 , C08G77/20 , C08G77/50 , C08L83/00 , C08L83/04 , C08G77/00 , C08G77/12
CPC分类号： C04B35/571 , C01B32/956 , C01B32/977 , C04B35/515 , C04B35/56 , C04B35/5603 , C04B35/80 , C08G77/20 , C08G77/50 , C08L83/00 , C08L83/04 , C04B2235/3418 , C04B2235/3826 , C04B2235/44 , C04B2235/48 , C04B2235/483 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/6581 , C04B2235/72 , C04B2235/721 , C04B2235/727 , C04B2235/77 , C04B2235/785 , C04B2235/94 , C04B2235/96 , C08G77/12 , C08G77/80 , C08L83/04 , C08L83/00
摘要： Materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. Doped SiOC and SiC materials for providing semiconductor properties to SiC wafers, including p- and n-type properties.
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公开(公告)号：US20230089735A1
公开(公告)日：2023-03-23
申请号：US17687735
申请日：2022-03-07
申请人： Pallidus, Inc.
发明人： Douglas M. Dukes , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Glenn Sandgren , Mark S. Land , Brian L. Benac
IPC分类号： C01B32/907 , C04B35/571 , C04B35/56 , C08G77/20 , C08G77/50 , C08L83/04 , C04B35/80
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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公开(公告)号：US20220002207A1
公开(公告)日：2022-01-06
申请号：US17367380
申请日：2021-07-04
申请人： Pallidus, Inc.
发明人： Douglas M. Dukes , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Glenn Sandgren , Mark S. Land , Brian L. Benac
IPC分类号： C04B35/571 , C04B35/56 , C08G77/20 , C08G77/50 , C08L83/04 , C01B32/977 , C04B35/80 , C04B35/515 , C01B32/956 , C08L83/00
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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公开(公告)号：US11820666B2
公开(公告)日：2023-11-21
申请号：US17396687
申请日：2021-08-07
申请人： Pallidus, Inc.
发明人： Douglas M. Dukes , Andrew R. Hopkins , Walter J. Sherwood , Ashish P. Diwanji , Glenn Sandgren , Mark S. Land , Brian L. Benac
IPC分类号： C01B33/00 , C01B32/956 , C04B35/571 , C08G77/50 , C04B35/56 , C08L83/04 , C08G77/20 , C01B32/40 , C01B32/50 , C01B32/977 , C04B35/80 , C08G77/12 , C09K8/80 , C08G77/00
CPC分类号： C01B32/956 , C01B32/40 , C01B32/50 , C01B32/977 , C04B35/56 , C04B35/5603 , C04B35/571 , C04B35/80 , C08G77/20 , C08G77/50 , C08L83/04 , C04B2235/3418 , C04B2235/3826 , C04B2235/44 , C04B2235/48 , C04B2235/483 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/6581 , C04B2235/72 , C04B2235/77 , C04B2235/96 , C08G77/12 , C08G77/80 , C09K8/80 , C08L83/00
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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9.发明授权公开(公告)号：US11685660B2
公开(公告)日：2023-06-27
申请号：US17000552
申请日：2020-08-24
申请人： Pallidus, Inc.
发明人： Mark S. Land
IPC分类号： C23C14/06 , C01B32/977 , C01B32/956 , C30B25/02 , C30B29/36 , C04B35/571 , C08G77/20 , C08G77/50 , C04B35/56 , C08L83/04 , C04B35/515 , C04B35/80 , C08G77/12 , C08G77/00
CPC分类号： C01B32/956 , C01B32/977 , C04B35/515 , C04B35/56 , C04B35/5603 , C04B35/571 , C04B35/80 , C08G77/20 , C08G77/50 , C08L83/04 , C23C14/0635 , C30B25/02 , C30B29/36 , C04B2235/3418 , C04B2235/3826 , C04B2235/3895 , C04B2235/44 , C04B2235/48 , C04B2235/483 , C04B2235/528 , C04B2235/5427 , C04B2235/5436 , C04B2235/6581 , C04B2235/72 , C04B2235/77 , C04B2235/94 , C04B2235/96 , C08G77/12 , C08G77/80 , C08L83/04 , C08L83/00
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
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公开(公告)号：US11365124B2
公开(公告)日：2022-06-21
申请号：US16825162
申请日：2020-03-20
申请人： Pallidus, Inc.
发明人： Mark S. Land , Ashish P. Diwanji , Andrew R. Hopkins , Walter J. Sherwood , Douglas M. Dukes , Glenn Sandgren , Brian L. Benac
IPC分类号： C01B32/977 , C01B32/956 , C30B23/00 , C30B23/02 , C30B29/36 , C30B29/06 , H01L29/16 , H01L29/66 , H01L21/02 , C04B35/56 , C04B35/571 , C08G77/20 , C08G77/50 , C08L83/04 , C04B35/80 , C08L83/00 , C08G77/12 , C08G77/00
摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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