Semiconductor package with hybrid through-silicon-vias
Abstract:
According to various examples, a device is described. The device may include an interposer. The device may also include a plurality of first through-silicon-vias disposed in the interposer, wherein the plurality of first through-silicon-vias have a first diameter. The device may also include a plurality of second through-silicon-vias disposed in the interposer, wherein the plurality of second through-silicon-vias have a second diameter larger than the first via diameter. The device may also include a first recess in the interposer positioned at bottom ends of the plurality of second through-silicon-vias.
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