Invention Grant
- Patent Title: Film forming method and film forming apparatus
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Application No.: US16514989Application Date: 2019-07-17
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Publication No.: US11373876B2Publication Date: 2022-06-28
- Inventor: Satoshi Takagi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-139734 20180725
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; H01L21/02 ; C23C16/02 ; H01L21/3205 ; C23C16/24 ; H01L21/285 ; C23C16/44 ; H01L21/3065 ; H01L21/324 ; H01L21/67
Abstract:
A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.
Public/Granted literature
- US20200035508A1 FILM FORMING METHOD AND FILM FORMING APPARATUS Public/Granted day:2020-01-30
Information query
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