Invention Grant
- Patent Title: Method of forming an array of vertical transistors
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Application No.: US16558928Application Date: 2019-09-03
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Publication No.: US11373913B2Publication Date: 2022-06-28
- Inventor: Deepak Chandra Pandey , Haitao Liu , Kamal M. Karda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8238 ; H01L21/8234 ; H01L29/08 ; H01L29/10 ; H01L29/78 ; H01L27/1159 ; H01L27/11507 ; H01L23/528 ; H01L29/786 ; H01L29/792 ; H01L27/24 ; H01L21/8239 ; H01L27/108 ; H01L21/768 ; H01L21/311

Abstract:
An array of vertical transistors comprises spaced pillars individually comprising a channel region of individual vertical transistors. A horizontally-elongated conductor line directly electrically couples together individual of the channel regions of the pillars of a plurality of the vertical transistors. An upper source/drain region is above the individual channel regions of the pillars, a lower source/drain region is below the individual channel regions of the pillars, and a conductive gate line is operatively aside the individual channel regions of the pillars and that interconnects multiple of the vertical transistors. Methods are disclosed.
Public/Granted literature
- US20210066135A1 Array Of Vertical Transistors And Method Of Forming An Array Of Vertical Transistors Public/Granted day:2021-03-04
Information query
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