Invention Grant
- Patent Title: 3D memory device including source line structure comprising composite material
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Application No.: US16930505Application Date: 2020-07-16
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Publication No.: US11374099B2Publication Date: 2022-06-28
- Inventor: Ting-Feng Liao , Sheng-Hong Chen , Kuang-Wen Liu
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/768 ; H01L23/535 ; H01L27/11582
Abstract:
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a source line structure. The source line structure includes a composite material formed in a trench. The composite material includes an oxide portion and a metal portion.
Public/Granted literature
- US20220020856A1 3D MEMORY DEVICE INCLUDING SOURCE LINE STRUCTURE COMPRISING COMPOSITE MATERIAL Public/Granted day:2022-01-20
Information query
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