公开(公告)号：US11374099B2

公开(公告)日：2022-06-28

申请号：US16930505

申请日：2020-07-16

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Ting-Feng Liao ,  Sheng-Hong Chen ,  Kuang-Wen Liu

IPC: H01L29/417 ,  H01L21/768 ,  H01L23/535 ,  H01L27/11582

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a source line structure. The source line structure includes a composite material formed in a trench. The composite material includes an oxide portion and a metal portion.

公开(公告)号：US20180261621A1

公开(公告)日：2018-09-13

申请号：US15455185

申请日：2017-03-10

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Sheng-Hong Chen ,  Ting-Feng Liao

IPC: H01L27/11582 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L27/11582

Abstract: A semiconductor structure includes a substrate and a plurality of sub-array structures disposed on the substrate. The sub-array structures separated from each other by a plurality of trenches. The semiconductor structure includes a three-dimensional array of memory cells. The memory cells include a plurality of cell groups disposed in the sub-array structures, respectively. The semiconductor structure further includes a plurality of support pillars and a plurality of conductive pillars disposed in the trenches. The support pillars and the conductive pillars in each of the trenches are alternately arranged in an extending direction of the trenches. The semiconductor structure further includes a plurality of conductive lines disposed in the trenches and on the support pillars and the conductive pillars. Each of the conductive lines connects the conductive pillars thereunder.