Invention Grant
- Patent Title: Memory device with a multiplexed command/address bus
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Application No.: US17143120Application Date: 2021-01-06
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Publication No.: US11380667B2Publication Date: 2022-07-05
- Inventor: William A. Lendvay
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/18
- IPC: H01L25/18 ; G06F13/16 ; G06F13/40 ; G11C11/4093 ; G06F3/06 ; G06F11/20 ; G06F1/30 ; G11C5/04 ; G11C11/4096 ; G11C5/06

Abstract:
A memory device includes a first plurality of volatile memories, a non-volatile memory, and a controller coupled to the non-volatile memory and including a first controller output. The memory device further includes a registering clock driver (RCD) including a first RCD output, and a first multiplexer including a first mux input coupled to the first RCD output, a second mux input coupled to the first controller output, and a first mux output coupled to the first plurality of volatile memories. The first multiplexer can be configured to provide command/address signals from one of the RCD and the controller to the first plurality of volatile memories.
Public/Granted literature
- US20210125977A1 MEMORY DEVICE WITH A MULTIPLEXED COMMAND/ADDRESS BUS Public/Granted day:2021-04-29
Information query
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