Anti-radiation structure, temperature-pressure complex sensor including the same and having anti-radiation property, and manufacturing method thereof
Abstract:
Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
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