Invention Grant
- Patent Title: Anti-radiation structure, temperature-pressure complex sensor including the same and having anti-radiation property, and manufacturing method thereof
-
Application No.: US16566221Application Date: 2019-09-10
-
Publication No.: US11382244B2Publication Date: 2022-07-05
- Inventor: Seong Jun Kim , Choon Gi Choi , Tam Van Nguyen , Bok Ki Min , Shuvra Mondal , Yoonsik Yi
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2018-0128659 20181026,KR10-2019-0063064 20190529
- Main IPC: H05K9/00
- IPC: H05K9/00 ; G01L1/22 ; G01K7/22 ; B82Y15/00 ; B82Y30/00

Abstract:
Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
Public/Granted literature
Information query