Invention Grant
- Patent Title: Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same
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Application No.: US17159244Application Date: 2021-01-27
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Publication No.: US11384433B2Publication Date: 2022-07-12
- Inventor: Minkyu Sung , Sung-Ki Lee , Dougyong Sung , Sang-Ho Lee , Kangmin Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2018-0144454 20181121
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/455 ; H01L21/683 ; H01J37/32 ; C23C16/509

Abstract:
A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.
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