Invention Grant
- Patent Title: Multi-source ion beam etch system
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Application No.: US16733299Application Date: 2020-01-03
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Publication No.: US11387071B2Publication Date: 2022-07-12
- Inventor: Qiwei Liang , Srinivas D Nemani , Ellie Yieh , Douglas Buchberger , Chentsau Chris Ying
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01J37/09
- IPC: H01J37/09 ; H01J37/305 ; H01J37/20 ; H01J37/30

Abstract:
Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.
Public/Granted literature
- US20210104374A1 MULTI-SOURCE ION BEAM ETCH SYSTEM Public/Granted day:2021-04-08
Information query