公开(公告)号：US11972943B2

公开(公告)日：2024-04-30

申请号：US16578050

申请日：2019-09-20

申请人： APPLIED MATERIALS, INC.

发明人： Bhargav S. Citla ,  Jethro Tannos ,  Srinivas D Nemani ,  Joshua Rubnitz

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/45536 ,  H01J37/321 ,  H01L21/02164

摘要： Methods and apparatus for depositing a dielectric material include: providing a first gas mixture into a processing chamber having a substrate disposed therein; forming a first remote plasma comprising first radicals in a remote plasma source and delivering the first radicals to an interior processing region in the processing chamber to form a layer of dielectric material in an opening in a material layer disposed on the substrate in a presence of the first gas mixture and the first radicals; terminating the first remote plasma and applying a first RF bias power to the processing chamber to form a first bias plasma; contacting the layer of dielectric material with the first bias plasma to form a first treated layer of dielectric material; and subsequently forming a second remote plasma comprising second radicals in the remote plasma source and delivering the second radicals to the interior processing region in the processing chamber in a presence of a second gas mixture while applying a second RF bias power to the processing chamber to form a second bias plasma, wherein the second radicals and second bias plasma contact the first treated layer of dielectric material to increase a hydrophobicity or a viscosity of the first treated layer of dielectric material.

公开(公告)号：US11205589B2

公开(公告)日：2021-12-21

申请号：US16594057

申请日：2019-10-06

申请人： APPLIED MATERIALS, INC.

发明人： He Ren ,  Hao Jiang ,  Mehul Naik ,  Srinivas D Nemani ,  Ellie Yieh

IPC分类号： H01L21/76 ,  H01L21/28 ,  H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  C23C14/58 ,  H01L21/3213 ,  C23C14/16

摘要： Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

公开(公告)号：US11387071B2

公开(公告)日：2022-07-12

申请号：US16733299

申请日：2020-01-03

申请人： APPLIED MATERIALS, INC.

发明人： Qiwei Liang ,  Srinivas D Nemani ,  Ellie Yieh ,  Douglas Buchberger ,  Chentsau Chris Ying

IPC分类号： H01J37/09 ,  H01J37/305 ,  H01J37/20 ,  H01J37/30

摘要： Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.