Invention Grant
- Patent Title: Direct graphene growing method
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Application No.: US16906214Application Date: 2020-06-19
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Publication No.: US11407637B2Publication Date: 2022-08-09
- Inventor: Hyeon-jin Shin , Jae-young Choi , Yun-sung Woo , Seon-mi Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Cantor Colburn LLP
- Priority: KR10-2011-0043074 20110506,KR10-2011-0126279 20111129
- Main IPC: C01B32/186
- IPC: C01B32/186 ; C23C16/26 ; B82Y30/00 ; B82Y40/00 ; H01L21/02 ; C23C16/02 ; C23C16/56

Abstract:
A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.
Public/Granted literature
- US20200317511A1 DIRECT GRAPHENE GROWING METHOD Public/Granted day:2020-10-08
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