- 专利标题： Method of manufacturing reflective mask blank, reflective mask blank, and method of manufacturing reflective mask
-
申请号： US17003685申请日： 2020-08-26
-
公开(公告)号： US11415874B2公开(公告)日： 2022-08-16
- 发明人: Tsuneo Terasawa , Hideo Kaneko , Yukio Inazuki , Takuro Kosaka
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP.
- 优先权： JPJP2019-166813 20190913
- 主分类号： G03F1/24
- IPC分类号： G03F1/24
摘要：
A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.