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公开(公告)号：US11835851B2
公开(公告)日：2023-12-05
申请号：US17463675
申请日：2021-09-01
CPC分类号： G03F1/24 , G03F7/70033
摘要： A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion in which Si layers and Mo layers are alternately laminated, and a layer containing Si and N intervenes at one or more portions between the Si layer and the Mo layer of the Si/Mo laminated portion, and is contact with both of the Si layer and the Mo layer.
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公开(公告)号：US10678125B2
公开(公告)日：2020-06-09
申请号：US15436128
申请日：2017-02-17
发明人： Takuro Kosaka , Yukio Inazuki , Hideo Kaneko
摘要： A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.
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公开(公告)号：US10459333B2
公开(公告)日：2019-10-29
申请号：US16171709
申请日：2018-10-26
发明人： Takuro Kosaka , Yukio Inazuki , Hideo Kaneko
摘要： A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
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公开(公告)号：US10146122B2
公开(公告)日：2018-12-04
申请号：US15403436
申请日：2017-01-11
发明人： Takuro Kosaka , Yukio Inazuki , Hideo Kaneko
摘要： A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
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公开(公告)号：US09488906B2
公开(公告)日：2016-11-08
申请号：US14489019
申请日：2014-09-17
发明人： Yukio Inazuki , Takashi Yoshii , Toyohisa Sakurada , Akira Ikeda , Hideo Kaneko , Satoshi Watanabe , Yoshio Kawai
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/38 , G03F1/50
摘要： The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
摘要翻译： 本发明涉及通过在含硅无机膜上进行甲硅烷基化处理后形成抗蚀膜而获得的光掩模坯料，并且提供一种在透明基板上至少含有含硅无机膜的光掩模坯料的制造方法， 在含硅无机膜上形成抗蚀膜，其特征在于，包括：形成所述含硅无机膜，使得与所述抗蚀剂膜接触的表面的氧浓度不低于55原子％且不大于75原子％ 在形成含硅无机膜之后进行甲硅烷基化处理; 然后通过涂布形成抗蚀剂膜。 该方法可以抑制由于显影后的抗蚀剂残留物等引起的缺陷的产生。
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公开(公告)号：US11073756B2
公开(公告)日：2021-07-27
申请号：US16033503
申请日：2018-07-12
发明人： Takuro Kosaka , Hideo Kaneko , Shigeo Irie , Naoki Kawaura
摘要： A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.
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7.发明授权公开(公告)号：US10670957B2
公开(公告)日：2020-06-02
申请号：US15717106
申请日：2017-09-27
发明人： Takuro Kosaka , Yukio Inazuki , Hideo Kaneko
摘要： During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.
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8.发明申请SILICON TARGET FOR SPUTTERING FILM FORMATION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM 审中-公开用于溅射膜形成的硅靶和形成含硅薄膜的方法公开(公告)号：US20140318948A1
公开(公告)日：2014-10-30
申请号：US14312192
申请日：2014-06-23
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Hideo Kaneko
CPC分类号： H01J37/3426 , C23C14/0676 , C23C14/14 , C23C14/3407 , C23C14/3414
摘要： A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.
摘要翻译： 提供一种用于溅射成膜的硅靶，其能够通过抑制溅射成膜期间的粉尘产生而形成高质量的含硅薄膜。 n型硅靶材料10和金属背板20经由接合层40彼此附接。由具有比硅靶材料10的功函数小的材料制成的导电层30设置在 接合层40侧的硅靶材10的表面。 也就是说，硅靶材料10经由导电层30和接合层40附着到金属背板20.在单晶硅的情况下，n型硅的功函数通常为4.05eV。 导电层30的材料的功函数需要小于4.05eV。
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公开(公告)号：US08753787B2
公开(公告)日：2014-06-17
申请号：US13682228
申请日：2012-11-20
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Yosuke Kojima , Takashi Haraguchi , Tomohito Hirose
摘要： A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask. The photomask includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen, with contents thereof falling in a specific range. The photomask may be irradiated with ArF excimer laser light in a cumulative dose of at least 10 kJ/cm2.
摘要翻译： 光图案曝光方法是通过光掩模将ArF准分子激光照射到抗蚀剂膜上。 光掩模包括透明基板和包含过渡金属，硅，氮和氧的材料的光学膜图案，其内容物落在特定范围内。 可以以至少10kJ / cm 2的累积剂量用ArF准分子激光照射光掩模。
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公开(公告)号：US11624712B2
公开(公告)日：2023-04-11
申请号：US17406743
申请日：2021-08-19
发明人： Tsuneo Terasawa , Yukio Inazuki , Hideo Kaneko
IPC分类号： G01N21/95 , G01N21/88 , G01N21/956
摘要： A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.
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