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1.发明授权公开(公告)号：US09772551B2
公开(公告)日：2017-09-26
申请号：US14921076
申请日：2015-10-23
IPC分类号： G03F1/84 , G03F1/50 , G01N21/88 , G01N21/956 , G01N21/95
CPC分类号： G03F1/84 , G01N21/8851 , G01N21/956 , G01N2021/8874 , G01N2021/9511 , G01N2021/95676 , G03F1/50
摘要： The defect size of a photomask blank is evaluated. An inspection-target photomask blank is irradiated with inspection light and reflected light of the region of the inspection-target photomask blank irradiated with the inspection light is collected through an objective lens of an inspection optical system as a magnified image of the region. Then, an intensity change part in the light intensity distribution profile of the magnified image is identified. Next, a difference in the light intensity of the intensity change part is obtained and the width of the intensity change part is obtained as the apparent width of the defect. Then, the width of the defect is calculated on the basis of a predetermined conversion expression showing the relationship among the difference in the light intensity, the apparent width of the defect, and the actual width of the defect, and the width of the defect is estimated.
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公开(公告)号：US11624712B2
公开(公告)日：2023-04-11
申请号：US17406743
申请日：2021-08-19
发明人： Tsuneo Terasawa , Yukio Inazuki , Hideo Kaneko
IPC分类号： G01N21/95 , G01N21/88 , G01N21/956
摘要： A substrate defect inspection method includes: irradiating a target substrate with an EUV beam from an EUV illumination source by using a first focusing optical system; guiding a scattered reflected beam, but no specularly-reflected beam, among beams reflected from the target substrate to a light receiving surface of a sensor by using a second focusing optical system; and determining that a defect is present at an irradiation spot of the target substrate with the EUV beam when an intensity of the received scattered reflected beam exceeds a predetermined threshold; the method further including, before the irradiation of the target substrate with the EUV beam: a reflectance acquisition step of acquiring a reflectance of the target substrate to the EUV beam; and a threshold computation step of setting the predetermined threshold based on the reflectance acquired in the reflectance acquisition step.
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公开(公告)号：US20220317061A1
公开(公告)日：2022-10-06
申请号：US17712031
申请日：2022-04-01
IPC分类号： G01N21/95 , G01N21/956 , H01L21/66 , G01N21/88
摘要： A defect inspection apparatus has a defect detection unit 152 that acquires first defect information on a defect of a photomask blank MB as a substrate; and a comparative information acquisition unit 150 that acquires a result of comparison between predetermined defect information stored in a storage unit 155 and the first defect information.
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公开(公告)号：US11415874B2
公开(公告)日：2022-08-16
申请号：US17003685
申请日：2020-08-26
发明人： Tsuneo Terasawa , Hideo Kaneko , Yukio Inazuki , Takuro Kosaka
IPC分类号： G03F1/24
摘要： A reflective mask blank including a substrate, and a multilayer reflection film for EUV light reflection, a protection film, and an absorber film for EUV light absorption formed on one main surface of the substrate in this order from the substrate side, and a conductive film formed on another main surface of the substrate, a coordinate reference mark is formed on the other main surface side.
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公开(公告)号：US11061319B2
公开(公告)日：2021-07-13
申请号：US15996926
申请日：2018-06-04
发明人： Takuro Kosaka , Tsuneo Terasawa , Shigeo Irie , Takahiro Kishita
摘要： A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.
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6.发明申请公开(公告)号：US20190331608A1
公开(公告)日：2019-10-31
申请号：US16391725
申请日：2019-04-23
发明人： Tsuneo Terasawa , Hiroshi Fukuda , Daisuke Iwai
IPC分类号： G01N21/88 , G01N21/956 , G01N21/958
摘要： A defect classification method in accordance with the present invention uses two types of images output from the defect inspection device 150 (i.e., the first inspection image generated from a luminance signal sequentially output from a detector SE and the second inspection image generated from a difference of the signals from an adjacent portion in a region where the defect exists). The first inspection image includes information for discriminating unevenness of the defective shape. Also, while it is difficult to discriminate unevenness of the defective shape by the second inspection image, the second inspection image includes information on a luminance distribution emphasizing a defective section. The region of the defective section is extracted from the second inspection image to be applied to the first inspection image and thereby define an arithmetic processing area, and the image processing is performed within the arithmetic processing area to compute a feature amount.
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公开(公告)号：US10295477B2
公开(公告)日：2019-05-21
申请号：US15880158
申请日：2018-01-25
IPC分类号： G01N21/88 , G01N21/956 , G03F1/84
摘要： A photomask blank having a thin film on a transparent substrate is inspected for defects by irradiating inspection light to a surface region of the blank, collecting the reflected light from the irradiated region via an inspection optical system to form a magnified image of the region, extracting a feature parameter of light intensity distribution from the magnified image, and identifying the bump/pit shape of the defect based on the feature parameter combined with the structure of the thin film. The defect inspection method is effective for discriminating defects of bump or pit shape in a highly reliable manner. On application of the defect inspection method, photomask blanks having no pinhole defects are available at lower costs and higher yields.
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公开(公告)号：US09829787B2
公开(公告)日：2017-11-28
申请号：US15181691
申请日：2016-06-14
CPC分类号： G03F1/36 , G01B11/24 , G01N21/9501 , G01N2201/0638 , G03F1/84
摘要： A method of inspecting a defect present at a surface portion of a photomask blank having at least one thin film formed on a substrate by use of the inspecting optical system. The method includes setting the distance between the defect and an objective lens of an inspecting optical system to a defocus distance, applying inspection light to the defect through the objective lens, collecting reflected light from the region irradiated with the inspection light, through the objective lens, as a magnified image, identifying a light intensity variation portion of the magnified image, and determining the rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the magnified image.
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公开(公告)号：US09829442B2
公开(公告)日：2017-11-28
申请号：US15256111
申请日：2016-09-02
IPC分类号： G01N21/00 , G01N21/88 , G01N21/956 , G03F1/84
CPC分类号： G01N21/8851 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Disclosed is a method of inspecting a defect present at a surface portion of a photomask blank which includes an optical film, and a thin film. The method includes: selecting and designating an inspection treatment procedure and a criterion for determination of rugged shape of the defect which correspond to modes of the optical film and the thin film of the photomask blank; applying inspection light to a region including the defect while maintaining a distance between the defect and an objective lens of an inspecting optical system, based on the designated inspection treatment procedure, and collecting reflected light from the region irradiated with the inspection light, as a magnified image of the region, through the inspecting optical system; and determining the rugged shape of the defect, from light intensity distribution of the magnified image, based on the designated criterion for determination.
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