- 专利标题： Pillar confined backside emitting VCSEL
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申请号： US16820263申请日： 2020-03-16
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公开(公告)号： US11424595B2公开(公告)日： 2022-08-23
- 发明人: Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu , Wilson Kyi , James Pao
- 申请人： OEpic SEMICONDUCTORS, INC
- 申请人地址： US CA Sunnyvale
- 专利权人： OEpic SEMICONDUCTORS, INC
- 当前专利权人： OEpic SEMICONDUCTORS, INC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Weiss & Moy, P.C.
- 代理商 Jeffrey D. Moy
- 主分类号： H01S5/183
- IPC分类号： H01S5/183 ; H01S5/026 ; H01S5/0234 ; H01S5/0237 ; H01S5/34 ; H01S5/02 ; H01S5/20 ; H01S5/042 ; H01S5/42 ; H01S5/024
摘要：
A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
公开/授权文献
- US20200220327A1 PILLAR CONFINED BACKSIDE EMITTING VCSEL 公开/授权日：2020-07-09
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