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公开(公告)号：US11283240B2
公开(公告)日：2022-03-22
申请号：US16208958
申请日：2018-12-04
发明人： Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu , Wilson Kyi , James Pao
IPC分类号： H01S5/183 , H01S5/026 , H01S5/0234 , H01S5/0237 , H01S5/34 , H01S5/02 , H01S5/20 , H01S5/042 , H01S5/42 , H01S5/024
摘要： A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
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公开(公告)号：US11201251B2
公开(公告)日：2021-12-14
申请号：US16782788
申请日：2020-02-05
发明人： Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu
IPC分类号： H01L29/66 , H01L21/332 , H01L31/0224 , H01L31/0352 , H01L31/105
摘要： A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.
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公开(公告)号：US11424597B2
公开(公告)日：2022-08-23
申请号：US15883930
申请日：2018-01-30
发明人： Ping-Show Wong , Jingzhou Yan , Ta-Chung Wu , James Pao , Majid Riaziat
摘要： A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.
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公开(公告)号：US11424595B2
公开(公告)日：2022-08-23
申请号：US16820263
申请日：2020-03-16
发明人： Yi-Ching Pao , Majid Riaziat , Ta-Chung Wu , Wilson Kyi , James Pao
IPC分类号： H01S5/183 , H01S5/026 , H01S5/0234 , H01S5/0237 , H01S5/34 , H01S5/02 , H01S5/20 , H01S5/042 , H01S5/42 , H01S5/024
摘要： A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
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