Invention Grant
- Patent Title: Defect offset correction
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Application No.: US17098895Application Date: 2020-11-16
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Publication No.: US11430108B2Publication Date: 2022-08-30
- Inventor: Chien-Ko Liao , Ya-Hsun Hsueh , Sheng-Hsiang Chuang , Hsu-Shui Liu , Jiun-Rong Pai , Shou-Wen Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Duane Morris LLP
- Main IPC: G06T7/33
- IPC: G06T7/33 ; G06T7/00 ; G06T7/73 ; G06T5/00 ; H01L21/66

Abstract:
A method includes: receiving a defect map from a defect scanner, wherein the defect map comprises at least one defect location of a semiconductor workpiece; annotating the defect map with a reference fiducial location of the semiconductor workpiece; determining a detected fiducial location within image data of the semiconductor workpiece; determining an offset correction based on comparing the detected fiducial location with the reference fiducial location; producing a corrected defect map by applying the offset correction to the defect map, wherein the applying the offset correction translocates the at least one defect location; and transferring the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map.
Public/Granted literature
- US20210065347A1 DEFECT OFFSET CORRECTION Public/Granted day:2021-03-04
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