Invention Grant
- Patent Title: Thin film barrier seed metallization in magnetic-plugged through hole inductor
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Application No.: US15919066Application Date: 2018-03-12
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Publication No.: US11443885B2Publication Date: 2022-09-13
- Inventor: Kristof Darmawikarta , Srinivas Pietambaram , Sandeep Gaan , Sri Ranga Sai Boyapati , Prithwish Chatterjee , Sameer Paital , Rahul Jain , Junnan Zhao
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01F17/06 ; H01F41/04 ; H01F27/28 ; H01F27/24

Abstract:
Embodiments include inductors and methods of forming inductors. In an embodiment, an inductor may include a substrate core and a conductive through-hole through the substrate core. Embodiments may also include a magnetic sheath around the conductive through hole. In an embodiment, the magnetic sheath is separated from the plated through hole by a barrier layer. In an embodiment, the barrier layer is formed over an inner surface of the magnetic sheath and over first and second surfaces of the magnetic sheath.
Public/Granted literature
- US20190279806A1 THIN FILM BARRIER SEED MATALLIZATION IN MAGNETIC-PLUGGED THROUGH HOLE INDUCTOR Public/Granted day:2019-09-12
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |