Invention Grant
- Patent Title: Doping techniques
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Application No.: US16536600Application Date: 2019-08-09
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Publication No.: US11443948B2Publication Date: 2022-09-13
- Inventor: Wolfgang Aderhold , Yi-Chiau Huang , Wei Liu , Benjamin Colombeau , Abhilash Mayur
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L29/66 ; H01L21/225 ; H01L21/324 ; H01L21/02 ; H01L27/11582 ; H01L27/11556
Abstract:
A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
Public/Granted literature
- US20200051818A1 Doping Techniques Public/Granted day:2020-02-13
Information query
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