公开(公告)号：US12261047B2

公开(公告)日：2025-03-25

申请号：US17882177

申请日：2022-08-05

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold ,  Yi-Chiau Huang ,  Wei Liu ,  Benjamin Colombeau ,  Abhilash Mayur

IPC: H01L21/20 ,  H01L21/225 ,  H01L21/324 ,  H01L21/02 ,  H10B41/27 ,  H10B43/27

Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

公开(公告)号：US11443948B2

公开(公告)日：2022-09-13

申请号：US16536600

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold ,  Yi-Chiau Huang ,  Wei Liu ,  Benjamin Colombeau ,  Abhilash Mayur

IPC: H01L21/82 ,  H01L29/66 ,  H01L21/225 ,  H01L21/324 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11556

Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

公开(公告)号：US20200051818A1

公开(公告)日：2020-02-13

申请号：US16536600

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold ,  Yi-Chiau Huang ,  Wei Liu ,  Benjamin Colombeau ,  Abhilash Mayur

IPC: H01L21/225 ,  H01L21/324

Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

公开(公告)号：US11859277B2

公开(公告)日：2024-01-02

申请号：US17327118

申请日：2021-05-21

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC: C23C16/06 ,  C23C16/14

CPC classification number: C23C16/14

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220375753A1

公开(公告)日：2022-11-24

申请号：US17882177

申请日：2022-08-05

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold ,  Yi-Chiau Huang ,  Wei Liu ,  Benjamin Colombeau ,  Abhilash Mayur

IPC: H01L21/225 ,  H01L21/324

Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

公开(公告)号：US20220372617A1

公开(公告)日：2022-11-24

申请号：US17327118

申请日：2021-05-21

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC: C23C16/14

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.