Invention Grant
- Patent Title: Method for manufacturing back surface incident type semiconductor photo detection element
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Application No.: US17046870Application Date: 2019-04-11
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Publication No.: US11450695B2Publication Date: 2022-09-20
- Inventor: Tomoya Taguchi , Yuki Yoshida , Katsumi Shibayama
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2018-078655 20180416
- International Application: PCT/JP2019/015833 WO 20190411
- International Announcement: WO2019/203125 WO 20191024
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/144

Abstract:
A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.
Public/Granted literature
- US20210082972A1 METHOD FOR MANUFACTURING BACK SURFACE INCIDENT TYPE SEMICONDUCTOR PHOTO DETECTION ELEMENT Public/Granted day:2021-03-18
Information query
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