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    Method for manufacturing back surface incident type semiconductor photo detection element
    1.
    发明授权
    Method for manufacturing back surface incident type semiconductor photo detection element 有权

    公开(公告)号：US11764236B2

    公开(公告)日：2023-09-19

    申请号：US17877214

    申请日：2022-07-29

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

    IPC: H01L27/146 ,  H01L27/144

    CPC classification number: H01L27/1446 ,  H01L27/1443

    Abstract: A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

    Manufacturing method for edge illuminated type photodiode and semiconductor wafer
    4.
    发明授权
    Manufacturing method for edge illuminated type photodiode and semiconductor wafer 有权
    边缘照明型光电二极管和半导体晶圆的制造方法

    公开(公告)号：US08993361B2

    公开(公告)日：2015-03-31

    申请号：US14012273

    申请日：2013-08-28

    Applicant: Hamamatsu Photonics K.K.

    Inventor： Hiroshi Oguri ,  Yoshitaka Ishikawa ,  Akira Sakamoto ,  Tomoya Taguchi ,  Yoshimaro Fujii

    IPC: H01L21/00 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/18

    CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/03529 ,  H01L31/103 ,  H01L31/18 ,  Y02E10/50

    Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.

    Abstract translation: 边缘照明型光电二极管的制造方法具有：在半导体衬底中的器件形成区域的每一个中形成第一导电类型的杂质掺杂层的工序; 在每个器件形成区域中形成第二导电类型的杂质掺杂层的工艺; 在相邻的器件形成区域的边界的位置处，通过蚀刻从主表面形成在半导体衬底的厚度方向上延伸的沟槽的工艺，以暴露器件形成区域的侧面; 在器件形成区域的露出侧面上形成绝缘膜的工序; 在半导体衬底的主表面侧上形成用于每个对应的杂质掺杂层的电极的工艺; 以及将半导体衬底分离成单个器件形成区域的过程。

    Back surface incident type semiconductor photo detection element
    6.
    发明授权
    Back surface incident type semiconductor photo detection element 有权

    公开(公告)号：US12021104B2

    公开(公告)日：2024-06-25

    申请号：US17046924

    申请日：2019-04-11

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14649

    Abstract: A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions constituting pn junctions with the first semiconductor region. The semiconductor substrate includes the plurality of second semiconductor in a side of the second main surface. Each of the plurality of second semiconductor regions includes a first region including a textured surface, and a second region including no textured surface. A thickness of the first region at a deepest position of recesses of the textured surface is smaller than a distance between a surface of the second region and the deepest position in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

    Workpiece cutting method
    7.
    发明授权
    Workpiece cutting method 有权

    公开(公告)号：US11413708B2

    公开(公告)日：2022-08-16

    申请号：US16605300

    申请日：2018-04-12

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi Sakamoto ,  Tomoya Taguchi

    IPC: B23K26/364 ,  B23K26/53 ,  B23K26/38 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/78 ,  B23K101/40

    Abstract: An object cutting method includes: a first step of preparing an object to be processed including a single crystal silicon substrate and a functional device layer provided on a first main surface side and forming an etching protection layer on a second main surface of the object; a second step of irradiating the object with laser light to form at least one row of modified regions in the single crystal silicon substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a surface of the etching protection layer; and a third step of performing dry etching on the object from the second main surface side, in a state in which the etching protection layer is formed on the second main surface, to form a groove opening to the second main surface.

    Backside illuminated semiconductor photodetection element
    8.
    发明授权
    Backside illuminated semiconductor photodetection element 有权

    公开(公告)号：US11276794B2

    公开(公告)日：2022-03-15

    申请号：US17046864

    申请日：2019-04-11

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

    IPC: H01L31/0352 ,  H01L31/102 ,  H01L31/12

    Abstract: A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

    Forming openings at intersection of cutting lines
    9.
    发明授权
    Forming openings at intersection of cutting lines 有权

    公开(公告)号：US11367655B2

    公开(公告)日：2022-06-21

    申请号：US16605878

    申请日：2018-02-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Takeshi Sakamoto

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308 ,  H01L23/00 ,  B23K26/53 ,  H01L21/304

    Abstract: A chip production method includes a first step of setting a first cutting line and a second cutting line on a substrate including a plurality of functional elements, a second step of forming a mask on the substrate such that the functional elements are covered and an intersection region including an intersection of the first cutting line and the second cutting line is exposed, a third step of removing the intersection region from the substrate and forming a penetration hole by etching the substrate using the mask, a fourth step of forming a modified region in the substrate along the first cutting line, a fifth step of forming a modified region in the substrate along the second cutting line, and a sixth step of forming chips by cutting the substrate along the first cutting line and the second cutting line.

    Method for manufacturing back surface incident type semiconductor photo detection element
    10.
    发明授权
    Method for manufacturing back surface incident type semiconductor photo detection element 有权

    公开(公告)号：US11450695B2

    公开(公告)日：2022-09-20

    申请号：US17046870

    申请日：2019-04-11

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

    IPC: H01L27/146 ,  H01L27/144

    Abstract: A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

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