Invention Grant
- Patent Title: Dielectric thin film, dielectric element and electronic circuit board
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Application No.: US17189859Application Date: 2021-03-02
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Publication No.: US11453615B2Publication Date: 2022-09-27
- Inventor: Toshio Asahi , Masamitsu Haemori , Hitoshi Saita , Masahito Furukawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2020-048054 20200318
- Main IPC: C04B35/58
- IPC: C04B35/58 ; H01G4/12 ; H01G4/008

Abstract:
A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.
Public/Granted literature
- US20210292244A1 DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD Public/Granted day:2021-09-23
Information query
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