公开(公告)号：US20250059094A1

公开(公告)日：2025-02-20

申请号：US18762275

申请日：2024-07-02

Applicant: TDK CORPORATION

Inventor： Toshihiro IGUCHI ,  Kenichiro Masuda ,  Tetsuya Yoshiyama ,  Toshio Asahi

IPC: C04B35/468 ,  H01G4/12

Abstract: A dielectric composition includes main phase grains and segregation grains. The segregation grains at least partly include RE-Mg—Ti—O segregation grains including “RE”, Mg, Ti, and O. “RE” includes a rare earth element. “RE”, Mg, and Ti in the RE-Mg—Ti—O segregation grains constitute 70 parts by mol or more in total out of 100 parts by mol of a total of metal elements in the RE-Mg—Ti—O segregation grains. A ratio of Mg to a total of “RE” and Mg in the RE-Mg—Ti—O segregation grains ranges from 0.1 to 0.3.

公开(公告)号：US11453615B2

公开(公告)日：2022-09-27

申请号：US17189859

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Toshio Asahi ,  Masamitsu Haemori ,  Hitoshi Saita ,  Masahito Furukawa

IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

公开(公告)号：US11062851B2

公开(公告)日：2021-07-13

申请号：US16790347

申请日：2020-02-13

Applicant: TDK Corporation

Inventor： Toshio Asahi ,  Hitoshi Saita

IPC: H01G2/06 ,  H01G4/008 ,  H01G4/33 ,  H01L23/12 ,  H01G4/30 ,  H05K1/16 ,  H05K3/46

Abstract: Disclosed herein is a thin film capacitor embedded substrate that includes a substrate and a plurality of thin film capacitors including at least first and second thin film capacitors embedded in the substrate. The first and second thin film capacitors are connected in parallel and have mutually different self-resonant frequencies.

公开(公告)号：US11655159B2

公开(公告)日：2023-05-23

申请号：US17071474

申请日：2020-10-15

Applicant: TDK CORPORATION

Inventor： Toshio Asahi ,  Masamitsu Haemori ,  Hitoshi Saita

IPC: C04B35/465 ,  C04B35/47 ,  H01G4/10 ,  H01G4/12 ,  C01G23/00 ,  C23C16/40 ,  C23C16/06 ,  C23C16/56 ,  H01G4/33 ,  H05K1/18

CPC classification number: C01G23/006 ,  C23C16/06 ,  C23C16/409 ,  C23C16/56 ,  H01G4/10 ,  H01G4/33 ,  H05K1/185 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2006/40 ,  H05K2201/10015

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.

公开(公告)号：US11551867B2

公开(公告)日：2023-01-10

申请号：US17034507

申请日：2020-09-28

Applicant: TDK CORPORATION

Inventor： Masamitsu Haemori ,  Toshio Asahi ,  Hitoshi Saita

IPC: H01G4/10 ,  H01G4/33

Abstract: The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-δNδ, in which 0

公开(公告)号：US11524897B2

公开(公告)日：2022-12-13

申请号：US17190045

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Toshio Asahi ,  Masamitsu Haemori ,  Masahito Furukawa ,  Hitoshi Saita

IPC: H05K1/03 ,  C01B21/082 ,  H01G4/005

Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ, in which 0.15