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    Dielectric film, dielectric element, and electronic circuit board
    1.
    发明授权
    Dielectric film, dielectric element, and electronic circuit board 有权

    公开(公告)号：US11462339B2

    公开(公告)日：2022-10-04

    申请号：US16702280

    申请日：2019-12-03

    Applicant: TDK CORPORATION

    Inventor： Saori Takahashi ,  Masahito Furukawa ,  Masamitsu Haemori ,  Hiroki Uchiyama ,  Wakiko Sato ,  Hitoshi Saita

    IPC: H01B3/12 ,  H01G4/33 ,  H01G4/12 ,  H05K1/18 ,  H05K3/30

    Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

    Dielectric thin film, dielectric element and electronic circuit board
    2.
    发明授权
    Dielectric thin film, dielectric element and electronic circuit board 有权

    公开(公告)号：US11453615B2

    公开(公告)日：2022-09-27

    申请号：US17189859

    申请日：2021-03-02

    Applicant: TDK CORPORATION

    Inventor： Toshio Asahi ,  Masamitsu Haemori ,  Hitoshi Saita ,  Masahito Furukawa

    IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

    Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

    Dielectric membrane and dielectric element
    6.
    发明授权
    Dielectric membrane and dielectric element 有权

    公开(公告)号：US10991510B2

    公开(公告)日：2021-04-27

    申请号：US16359824

    申请日：2019-03-20

    Applicant: TDK CORPORATION

    Inventor： Saori Takahashi ,  Masahito Furukawa ,  Masamitsu Haemori ,  Hiroki Uchiyama ,  Wakiko Sato ,  Hitoshi Saita

    IPC: H01G4/33 ,  H01G4/12

    Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

    Piezoelectric composition and piezoelectric device
    7.
    发明授权
    Piezoelectric composition and piezoelectric device 有权
    压电组合和压电器件

    公开(公告)号：US09537083B2

    公开(公告)日：2017-01-03

    申请号：US14201515

    申请日：2014-03-07

    Applicant: TDK CORPORATION

    Inventor： Taku Masai ,  Masamitsu Haemori ,  Masahito Furukawa ,  Junichi Yamazaki ,  Kouhei Ohhashi

    IPC: H01L41/187 ,  C04B35/475 ,  H01L41/08 ,  H01L41/316

    CPC classification number: H01L41/1878 ,  C04B35/475 ,  H01L41/0805 ,  H01L41/316

    Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

    Abstract translation: 本发明提供一种压电组合物，其含有主要成分为钙钛矿型氧化物，其由不含Pb的通式ABO3表示，具有含有Bi，Na，K的A位点和含有Ti的B位点。 Ti部分被选自Mn，Cr，Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为 主要组分按Biu1MeO3计为6摩尔％至43摩尔％。

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