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公开(公告)号:US11462339B2
公开(公告)日:2022-10-04
申请号:US16702280
申请日:2019-12-03
Applicant: TDK CORPORATION
Inventor: Saori Takahashi , Masahito Furukawa , Masamitsu Haemori , Hiroki Uchiyama , Wakiko Sato , Hitoshi Saita
Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.
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公开(公告)号:US11453615B2
公开(公告)日:2022-09-27
申请号:US17189859
申请日:2021-03-02
Applicant: TDK CORPORATION
Inventor: Toshio Asahi , Masamitsu Haemori , Hitoshi Saita , Masahito Furukawa
Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.
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公开(公告)号:US11655159B2
公开(公告)日:2023-05-23
申请号:US17071474
申请日:2020-10-15
Applicant: TDK CORPORATION
Inventor: Toshio Asahi , Masamitsu Haemori , Hitoshi Saita
IPC: C04B35/465 , C04B35/47 , H01G4/10 , H01G4/12 , C01G23/00 , C23C16/40 , C23C16/06 , C23C16/56 , H01G4/33 , H05K1/18
CPC classification number: C01G23/006 , C23C16/06 , C23C16/409 , C23C16/56 , H01G4/10 , H01G4/33 , H05K1/185 , C01P2002/52 , C01P2002/72 , C01P2002/74 , C01P2006/40 , H05K2201/10015
Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.
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公开(公告)号:US11551867B2
公开(公告)日:2023-01-10
申请号:US17034507
申请日:2020-09-28
Applicant: TDK CORPORATION
Inventor: Masamitsu Haemori , Toshio Asahi , Hitoshi Saita
Abstract: The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-δNδ, in which 0
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公开(公告)号:US11524897B2
公开(公告)日:2022-12-13
申请号:US17190045
申请日:2021-03-02
Applicant: TDK CORPORATION
Inventor: Toshio Asahi , Masamitsu Haemori , Masahito Furukawa , Hitoshi Saita
IPC: H05K1/03 , C01B21/082 , H01G4/005
Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-δNδ, in which 0.15
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公开(公告)号:US10991510B2
公开(公告)日:2021-04-27
申请号:US16359824
申请日:2019-03-20
Applicant: TDK CORPORATION
Inventor: Saori Takahashi , Masahito Furukawa , Masamitsu Haemori , Hiroki Uchiyama , Wakiko Sato , Hitoshi Saita
Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.
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公开(公告)号:US09537083B2
公开(公告)日:2017-01-03
申请号:US14201515
申请日:2014-03-07
Applicant: TDK CORPORATION
Inventor: Taku Masai , Masamitsu Haemori , Masahito Furukawa , Junichi Yamazaki , Kouhei Ohhashi
IPC: H01L41/187 , C04B35/475 , H01L41/08 , H01L41/316
CPC classification number: H01L41/1878 , C04B35/475 , H01L41/0805 , H01L41/316
Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.
Abstract translation: 本发明提供一种压电组合物,其含有主要成分为钙钛矿型氧化物,其由不含Pb的通式ABO3表示,具有含有Bi,Na,K的A位点和含有Ti的B位点。 Ti部分被选自Mn,Cr,Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为 主要组分按Biu1MeO3计为6摩尔%至43摩尔%。
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公开(公告)号:US09437807B2
公开(公告)日:2016-09-06
申请号:US14674466
申请日:2015-03-31
Applicant: TDK CORPORATION
Inventor: Yuko Saya , Taku Masai , Masahito Furukawa , Masamitsu Haemori
IPC: H01L41/187 , C04B35/475 , H01L41/083 , H01L41/08
CPC classification number: H01L41/1878 , B32B18/00 , C04B35/475 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B35/638 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3272 , C04B2235/3298 , C04B2235/442 , C04B2235/449 , C04B2235/6562 , C04B2235/6565 , C04B2235/768 , C04B2235/785 , C04B2235/786 , C04B2237/346 , C04B2237/68 , C04B2237/704 , C23C14/08 , H01L41/0805 , H01L41/083
Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1−k)z)O3 0.15≦x≦0.7, 0.28≦y≦0.75, 0.02≦z≦0.30, 0.17≦k≦0.83, 0.75≦m≦1.0, and x+y+z=1.
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