- 专利标题： Metal mask substrate for vapor deposition, metal mask for vapor deposition, production method for metal mask substrate for vapor deposition, and production method for metal mask for vapor deposition
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申请号： US17013535申请日： 2020-09-04
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公开(公告)号： US11453940B2公开(公告)日： 2022-09-27
- 发明人: Sumika Tamura , Mikio Shinno , Daisei Fujito , Kiyoaki Nishitsuji , Takehiro Nishi , Naoko Mikami
- 申请人： TOPPAN PRINTING CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： TOPPAN PRINTING CO., LTD.
- 当前专利权人： TOPPAN PRINTING CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Squire Patton Boggs (US) LLP
- 优先权： JP2015-143509 20150717,JP2015-171440 20150831,JP2016-079099 20160411
- 主分类号： C23C14/04
- IPC分类号： C23C14/04 ; C25D1/04 ; C25B11/055 ; C25C1/08 ; C25C7/08 ; C25D1/10 ; C25D11/34 ; H01L51/00 ; C25D3/56
摘要：
A vapor deposition metal mask substrate includes a nickel-containing metal sheet including a obverse surface and a reverse surface, which is opposite to the obverse surface. At least one of the obverse surface and the reverse surface is a target surface for placing a resist layer. The target surface has a surface roughness Sa of less than or equal to 0.019 μm. The target surface has a surface roughness Sz of less than or equal to 0.308 μm.
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