A processing device in a memory system receives a request to erase a data block of a memory device, determines a number of program/erase cycles performed on the data block, and performs an erase operation to erase the data block. The processing device further determines that the number of program/erase cycles performed on the data block satisfies a scan threshold condition and performs a first threshold voltage integrity scan on the data block to determine a first error rate associated with a current threshold voltage of at least one select gate device of the data block. Responsive to the first error rate associated with the current threshold voltage of the at least one select gate device satisfying an error threshold criterion, the processing device performs a touch up operation on the at least one select gate device to adjust the current threshold voltage to the target threshold voltage.