Invention Grant
- Patent Title: Method for fabricating magnetic tunneling junction element with a composite capping layer
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Application No.: US16574103Application Date: 2019-09-18
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Publication No.: US11456411B2Publication Date: 2022-09-27
- Inventor: Qinli Ma , Wei-Chuan Chen , Youngsuk Choi , Shu-Jen Han
- Applicant: HeFeChip Corporation Limited
- Applicant Address: HK Sai Ying Pun
- Assignee: HeFeChip Corporation Limited
- Current Assignee: HeFeChip Corporation Limited
- Current Assignee Address: HK Sai Ying Pun
- Agent Winston Hsu
- Main IPC: H01L43/12
- IPC: H01L43/12 ; G01R33/09 ; G11B5/39 ; H01L27/22 ; G11C11/16 ; H01L43/10 ; H01L43/08
Abstract:
A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.
Public/Granted literature
- US20210005809A1 METHOD FOR FABRICATING MAGNETIC TUNNELING JUNCTION ELEMENT WITH A COMPOSITE CAPPING LAYER Public/Granted day:2021-01-07
Information query
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