Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.