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公开(公告)号：US12174616B2
公开(公告)日：2024-12-24
申请号：US18313655
申请日：2023-05-08
Inventor： Michael X. Yang , Markus Lieberer , Joseph Cibere
IPC: G05B19/4155 , H01L21/67
Abstract: A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.
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2.发明授权公开(公告)号：US12159789B2
公开(公告)日：2024-12-03
申请号：US17372847
申请日：2021-07-12
Inventor： Shawming Ma
IPC: H01L21/311 , H01J37/32 , H01L21/3105
Abstract: A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
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公开(公告)号：US20240355634A1
公开(公告)日：2024-10-24
申请号：US18653280
申请日：2024-05-02
Inventor： Fei Yu , Mengyang Xin , Junliang Li
IPC: H01L21/311 , H01J37/32
CPC classification number: H01L21/31116 , H01J37/321 , H01J37/3244 , H01J2237/332 , H01J2237/334
Abstract: A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
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公开(公告)号：US12119216B2
公开(公告)日：2024-10-15
申请号：US18336552
申请日：2023-06-16
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/073 , H01J61/28 , H01J61/52 , H01J61/86 , H05H1/48
CPC classification number: H01J61/86 , H01J61/0732 , H01J61/28 , H01J61/526 , H05H1/48
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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公开(公告)号：US12087608B2
公开(公告)日：2024-09-10
申请号：US17489226
申请日：2021-09-29
Inventor： Mengyang Xin , Fei Yu , Gonglin Luo
IPC: H01L21/677 , B25J19/00 , H01L21/687 , B25J9/04
CPC classification number: H01L21/67742 , B25J19/00 , H01L21/68707 , B25J9/043
Abstract: The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
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Patent Agency Ranking
公开(公告)号：US20240282614A1
公开(公告)日：2024-08-22
申请号：US18654429
申请日：2024-05-03
Inventor： Maolin Long
IPC: H01L21/683 , H01J37/32
CPC classification number: H01L21/6833 , H01J37/32082 , H01J37/32577 , H01J37/32724
Abstract: An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
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公开(公告)号：US12002701B2
公开(公告)日：2024-06-04
申请号：US17551247
申请日：2021-12-15
Inventor： Maolin Long
IPC: H01L21/68 , H01J37/32 , H01L21/683
CPC classification number: H01L21/6833 , H01J37/32082 , H01J37/32577 , H01J37/32724
Abstract: An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
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公开(公告)号：US11848204B2
公开(公告)日：2023-12-19
申请号：US17827198
申请日：2022-05-27
Inventor： Stephen E. Savas , Shawming Ma
IPC: H01L21/02 , H01L21/67 , H01J37/32 , H01L21/263 , H01L21/762
CPC classification number: H01L21/02315 , H01J37/32119 , H01J37/32651 , H01L21/02348 , H01L21/67207 , H01J37/32449 , H01L21/263 , H01L21/762
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
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公开(公告)号：US11812523B2
公开(公告)日：2023-11-07
申请号：US16898495
申请日：2020-06-11
Inventor： Michael X. Yang , Rolf Bremensdorfer
CPC classification number: H05B3/0047 , G02F1/163 , H05B1/0233
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.
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公开(公告)号：US20230352294A1
公开(公告)日：2023-11-02
申请号：US18336552
申请日：2023-06-16
Inventor： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC: H01J61/86 , H01J61/073 , H05H1/48 , H01J61/52 , H01J61/28
CPC classification number: H01J61/86 , H01J61/0732 , H05H1/48 , H01J61/526 , H01J61/28
Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
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