-
公开(公告)号：US20240355634A1
公开(公告)日：2024-10-24
申请号：US18653280
申请日：2024-05-02
发明人： Fei Yu , Mengyang Xin , Junliang Li
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/3244 , H01J2237/332 , H01J2237/334
摘要： A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.
-
公开(公告)号：US12119216B2
公开(公告)日：2024-10-15
申请号：US18336552
申请日：2023-06-16
发明人： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC分类号： H01J61/073 , H01J61/28 , H01J61/52 , H01J61/86 , H05H1/48
CPC分类号： H01J61/86 , H01J61/0732 , H01J61/28 , H01J61/526 , H05H1/48
摘要： Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
-
公开(公告)号：US12087608B2
公开(公告)日：2024-09-10
申请号：US17489226
申请日：2021-09-29
发明人： Mengyang Xin , Fei Yu , Gonglin Luo
IPC分类号： H01L21/677 , B25J19/00 , H01L21/687 , B25J9/04
CPC分类号： H01L21/67742 , B25J19/00 , H01L21/68707 , B25J9/043
摘要： The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
-
公开(公告)号：US20240282614A1
公开(公告)日：2024-08-22
申请号：US18654429
申请日：2024-05-03
发明人： Maolin Long
IPC分类号： H01L21/683 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/32082 , H01J37/32577 , H01J37/32724
摘要： An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
-
公开(公告)号：US12002701B2
公开(公告)日：2024-06-04
申请号：US17551247
申请日：2021-12-15
发明人： Maolin Long
IPC分类号： H01L21/68 , H01J37/32 , H01L21/683
CPC分类号： H01L21/6833 , H01J37/32082 , H01J37/32577 , H01J37/32724
摘要： An electrostatic chuck including a workpiece support surface, clamping layer, heating layer, thermal control system, and sealing band is disclosed. The sealing band surrounds an outer perimeter of the electrostatic chuck including at least a portion of the workpiece surface. The sealing band has a width greater than about 3 millimeters (mm) up to about 10 mm. Plasma processing apparatuses and systems incorporating the electrostatic chuck are also provided.
-
公开(公告)号：US11848204B2
公开(公告)日：2023-12-19
申请号：US17827198
申请日：2022-05-27
发明人： Stephen E. Savas , Shawming Ma
IPC分类号： H01L21/02 , H01L21/67 , H01J37/32 , H01L21/263 , H01L21/762
CPC分类号： H01L21/02315 , H01J37/32119 , H01J37/32651 , H01L21/02348 , H01L21/67207 , H01J37/32449 , H01L21/263 , H01L21/762
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
-
公开(公告)号：US11812523B2
公开(公告)日：2023-11-07
申请号：US16898495
申请日：2020-06-11
CPC分类号： H05B3/0047 , G02F1/163 , H05B1/0233
摘要： Apparatus, systems, and methods for processing workpieces are provided. In one example, the system includes a processing chamber. The system includes a workpiece support configured to support a workpiece within the processing chamber. The system includes a heat source configured to emit light toward the workpiece. The system includes a shutter disposed between the workpiece and the heat source. The shutter includes an electrochromic material configurable in a translucent state and an opaque state. When the electrochromic material is configured in the opaque state, the shutter reduces transmission of the light through the shutter, and when the electrochromic material is configured in the translucent state, the light at least partially passes through the shutter. The system includes a controller configured to control the shutter to reduce transmission of light through the shutter during a thermal treatment process.
-
公开(公告)号：US20230352294A1
公开(公告)日：2023-11-02
申请号：US18336552
申请日：2023-06-16
发明人： Michael X. Yang , Rolf Bremensdorfer , Dave Camm , Joseph Cibere , Dieter Hezler , Shawming Ma , Yun Yang
IPC分类号： H01J61/86 , H01J61/073 , H05H1/48 , H01J61/52 , H01J61/28
CPC分类号： H01J61/86 , H01J61/0732 , H05H1/48 , H01J61/526 , H01J61/28
摘要： Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.
-
公开(公告)号：US11651977B2
公开(公告)日：2023-05-16
申请号：US17217019
申请日：2021-03-30
发明人： Shanyu Wang , Chun Yan
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/32449 , H01J37/32788 , H01L21/02071 , H01L21/32136 , H01J2237/334
摘要： Methods for processing a workpiece are provided. Conducting a thermal treatment on a workpiece are provided. The workpiece contains at least one layer of metal. The method can include generating one or more species from a process gas. The process gas can include hydrogen or deuterium. The method can include filtering the one or more species to create a filtered mixture and exposing the workpiece to the filtered mixture. An oxidation process on a workpiece are provided. The method can be conducted at a process temperature of less than 350° C.
-
公开(公告)号：US20230091035A1
公开(公告)日：2023-03-23
申请号：US17994985
申请日：2022-11-28
IPC分类号： H01J37/32 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/02
摘要： Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.
-
-
-
-
-
-
-
-
-
搜索结果
195 条记录 (耗时 0.033 秒)
