Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US16916150Application Date: 2020-06-30
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Publication No.: US11462549B2Publication Date: 2022-10-04
- Inventor: Chong-De Lien , Shih-Hao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/775 ; H01L29/06 ; H01L21/8238 ; H01L21/02 ; H01L29/78 ; H01L29/66
Abstract:
Provided is a SRAM device including a pull-up device and a pull-down device. The pull-up device includes a plurality of first epitaxial source and drain (S/D) features on a first fin, and a plurality of first residues between the plurality of first epitaxial source and drain (S/D) features and the first fin. The pull-down device includes a plurality of second epitaxial S/D features on a second fin.
Public/Granted literature
- US20210408010A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-12-30
Information query
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