Invention Grant
- Patent Title: Retention improvement by high-k encapsulation of RRAM devices
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Application No.: US16226198Application Date: 2018-12-19
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Publication No.: US11462684B2Publication Date: 2022-10-04
- Inventor: Albert Chen , Nathan Strutt , Oleg Golonzka , Pedro Quintero , Christopher J. Jezewski , Elijah V. Karpov
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
An RRAM device is disclosed. The RRAM device includes a bottom electrode, a high-k material on the bottom electrode, a top electrode, a top contact on the top electrode and an encapsulating layer of Al2O3. The encapsulating layer encapsulates the bottom electrode, the high-k material, the top electrode and the top contact.
Information query
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