Invention Grant
- Patent Title: Non volatile static random access memory device and corresponding control method
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Application No.: US17157631Application Date: 2021-01-25
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Publication No.: US11488666B2Publication Date: 2022-11-01
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR2000761 20200127
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C14/00

Abstract:
An integrated circuit comprises a memory device including at least one memory point having a volatile memory cell and a single non-volatile memory cell coupled together to a common node, and a single selection transistor coupled between the common node and a single bit line. A first output of the volatile memory cell is coupled to the common node, and a second output of the volatile memory cell, complementary to the first output, is not connected to any node outside the volatile memory cell.
Public/Granted literature
- US20210233586A1 NON VOLATILE STATIC RANDOM ACCESS MEMORY DEVICE AND CORRESPONDING CONTROL METHOD Public/Granted day:2021-07-29
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