Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17202661Application Date: 2021-03-16
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Publication No.: US11495308B2Publication Date: 2022-11-08
- Inventor: Junya Matsuno , Kenro Kubota , Masato Dome , Kensuke Yamamoto , Kei Shiraishi , Kazuhiko Satou , Ryo Fukuda , Masaru Koyanagi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-157763 20200918
- Main IPC: G11C16/32
- IPC: G11C16/32 ; G11C16/04 ; H01L27/115 ; G11C16/08 ; G11C16/26

Abstract:
According to an embodiment, a semiconductor device includes a first circuit, a second circuit, and a third circuit. The first circuit is configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level. The first voltage is higher than the second voltage. The second circuit is coupled to the first node and configured to latch data based on a voltage of the first node. The third circuit includes a first inverter. The first inverter includes a first input terminal coupled to the first node and a first output terminal coupled to the first node.
Public/Granted literature
- US20220093188A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-24
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