Invention Grant
- Patent Title: Integrated circuit device with improved layout
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Application No.: US17103532Application Date: 2020-11-24
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Publication No.: US11495619B2Publication Date: 2022-11-08
- Inventor: Fong-yuan Chang , Chun-Chen Chen , Po-Hsiang Huang , Lee-Chung Lu , Chung-Te Lin , Jerry Chang Jui Kao , Sheng-Hsiung Chen , Chin-Chou Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/118
- IPC: H01L27/118 ; G06F30/398 ; H01L27/02

Abstract:
An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
Public/Granted literature
- US20210082960A1 INTEGRATED CIRCUIT DEVICE WITH IMPROVED LAYOUT Public/Granted day:2021-03-18
Information query
IPC分类: