Invention Grant
- Patent Title: Hybrid high and low stress oxide embedded capacitor dielectric
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Application No.: US16435095Application Date: 2019-06-07
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Publication No.: US11495658B2Publication Date: 2022-11-08
- Inventor: Elizabeth Costner Stewart , Jeffrey A. West , Thomas D. Bonifield
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/07 ; H01L29/06 ; H01L23/522
Abstract:
An electronic device, e.g. integrated circuit, has top and bottom metal plates located over a substrate, the bottom plate located between the top plate and the substrate. A high-stress silicon dioxide layer is located between the bottom plate and the substrate. At least one low-stress silicon dioxide layer is located between the top plate and the bottom plate.
Information query
IPC分类:
