- 专利标题: Group-IV solar cell structure using group-IV or III-V heterostructures
-
申请号: US13617566申请日: 2012-09-14
-
公开(公告)号: US11495705B2公开(公告)日: 2022-11-08
- 发明人: Richard R. King , Christopher M. Fetzer , Nasser H. Karam
- 申请人: Richard R. King , Christopher M. Fetzer , Nasser H. Karam
- 申请人地址: US CA Thousand Oaks; US CA Valencia; US CA La Canada
- 专利权人: Richard R. King,Christopher M. Fetzer,Nasser H. Karam
- 当前专利权人: Richard R. King,Christopher M. Fetzer,Nasser H. Karam
- 当前专利权人地址: US CA Thousand Oaks; US CA Valencia; US CA La Canada
- 代理机构: MH2 Technology Law Group LLP
- 主分类号: H01L31/078
- IPC分类号: H01L31/078 ; H01L31/0725 ; H01L31/0687 ; H01L31/074
摘要:
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
公开/授权文献
信息查询
IPC分类: