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公开(公告)号：US09985160B2
公开(公告)日：2018-05-29
申请号：US13619625
申请日：2012-09-14
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/078 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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2.发明申请公开(公告)号：US20140076387A1
公开(公告)日：2014-03-20
申请号：US13617316
申请日：2012-09-14
IPC分类号： H01L31/0264 , H01L31/06
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
摘要翻译： 公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，其中至少第一层包括IV族半导体，其中部分电池包括第三层，其包含III-V 具有与第一层的IV族半导体不同的组成的半导体或IV族半导体，使得在第一层和第二层之间形成异质结构。
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公开(公告)号：US07119271B2
公开(公告)日：2006-10-10
申请号：US10356028
申请日：2003-01-31
CPC分类号： H01L31/02168 , H01L31/03046 , H01L31/03048 , H01L31/0687 , H01L31/0725 , H01L31/1852 , Y02E10/544
摘要： A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.
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公开(公告)号：US6150603A
公开(公告)日：2000-11-21
申请号：US298248
申请日：1999-04-23
IPC分类号： H01L31/04 , H01L31/068 , H01L31/0232
CPC分类号： H01L31/068 , H01L31/02167 , Y02E10/547
摘要： An improved photovoltaic cell, according to one embodiment, includes a base layer; a primary window layer having a first type of doping, with the primary window layer being disposed over the base layer; and a secondary window layer having the first type of doping, with the secondary window layer being disposed over the primary window layer. In another embodiment, the improved photovoltaic cell has a multilayer back-surface field structure; a base layer disposed over the back-surface field structure; and a primary window layer disposed over the base layer. In yet another embodiment, the photovoltaic cell includes a base layer; and a primary window layer disposed over the base layer, with the primary window layer having a thickness of at least about 1000 Angstroms.
摘要翻译： 根据一个实施例，改进的光伏电池包括基极层; 具有第一类型掺杂的主窗口层，其中所述主窗口层设置在所述基底层上; 以及具有第一类型掺杂的次级窗口层，其中副窗口层设置在主窗口层之上。 在另一个实施例中，改进的光伏电池具有多层背表面场结构; 设置在背面场结构上的基层; 以及设置在所述基底层上的主窗口层。 在另一个实施例中，光伏电池包括基层; 以及设置在所述基底层上的主窗口层，其中所述主窗口层具有至少约1000埃的厚度。
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公开(公告)号：US11495705B2
公开(公告)日：2022-11-08
申请号：US13617566
申请日：2012-09-14
IPC分类号： H01L31/078 , H01L31/0725 , H01L31/0687 , H01L31/074
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US10903383B2
公开(公告)日：2021-01-26
申请号：US13618816
申请日：2012-09-14
IPC分类号： H01L31/078 , H01L31/074 , H01L31/0725 , H01L31/0687 , H01L31/0745
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least as first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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7.发明授权Monolithic bypass diode and photovoltaic cell with bypass diode formed in back of substrate 有权具有旁路二极管的单片旁路二极管和光伏电池形成在衬底背面公开(公告)号：US09029685B2
公开(公告)日：2015-05-12
申请号：US11283268
申请日：2005-11-18
IPC分类号： H01L31/00 , H01L27/142 , H01L31/0725
CPC分类号： H01L27/142 , H01L31/0445 , H01L31/0725 , Y02E10/50
摘要： An apparatus and method for making a solar cell assembly. An apparatus in accordance with the present invention comprises a substrate, at least a first solar cell, coupled to a first side of the substrate, the first side of the substrate to be exposed to light such that the at least first solar cell generates a current when exposed to the light, and a bypass diode, formed on a second side of the substrate, the second side of the substrate being substantially opposite the first side of the substrate, such that the bypass diode is monolithically integrated with the at least first solar cell.
摘要翻译： 一种用于制造太阳能电池组件的装置和方法。 根据本发明的装置包括：衬底，至少第一太阳能电池，耦合到衬底的第一侧，衬底的第一侧被暴露于光，使得至少第一太阳能电池产生电流 当暴露于光时，形成在衬底的第二侧上的旁路二极管，衬底的第二侧基本上与衬底的第一侧相对，使得旁路二极管与至少第一太阳能电池单片集成 细胞。
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公开(公告)号：US20140076388A1
公开(公告)日：2014-03-20
申请号：US13617886
申请日：2012-09-14
IPC分类号： H01L31/06
CPC分类号： H01L31/074 , H01L31/0687 , H01L31/0725 , H01L31/0735 , H01L31/0745 , H01L31/078 , H01L31/18 , Y02E10/50 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US20120240987A1
公开(公告)日：2012-09-27
申请号：US13069274
申请日：2011-03-22
IPC分类号： H01L31/06 , H01L31/18 , H01L31/0336
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/0687 , H01L31/06875 , Y02E10/544
摘要： A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum.
摘要翻译： 公开了具有增加的光生电流密度和增加的电流输出的半导体器件结构。 该器件包括低带隙吸收体区域，其增加了电荷载流子的光生能力的波长范围，并且可以收集有用的电流。 低带隙吸收体区域可以通过应变补偿区域进行应变平衡，并且低带隙吸收体区域和应变补偿区域可以由相同的三元半导体族形成。 该器件可以是具有变质或晶格失配的基极层的太阳能电池，子电池或其它光电器件，低带隙吸收器区域改善了子电池的有效带隙组合和多结电池内的电流平衡，以实现更高效率的转换 的太阳光谱。
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公开(公告)号：US20110303288A1
公开(公告)日：2011-12-15
申请号：US12814722
申请日：2010-06-14
IPC分类号： H01L31/0216 , H01L23/482 , H01L31/18
CPC分类号： H01L31/0687 , H01L21/2007 , H01L31/043 , H01L31/06875 , H01L31/0693 , H01L31/0725 , H01L31/18 , H01L31/1844 , H01L31/1892 , H01L31/1896 , Y02E10/544
摘要： A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.
摘要翻译： 一种半导体结构，包括将第一半导体晶片层连接到第二半导体晶片层的接合层，所述接合层包括导电性碳质成分和粘合剂成分。
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