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公开(公告)号：US10069026B2
公开(公告)日：2018-09-04
申请号：US11305967
申请日：2005-12-19
IPC分类号： H01L31/00 , H01L31/0725 , H01L31/0352 , H01L31/0735 , H01L31/075 , H01L31/078 , B82Y20/00
摘要： Methods and apparatuses for a dual heterojunction multijunction solar cell are disclosed. A method in accordance with the present invention comprises growing a base material for a solar cell, growing at least one dual heterojunction on the base material, and growing an emitter on the at least one dual heterojunction. An apparatus in accordance with the present invention comprises a substrate, and a first subcell, coupled to the substrate, wherein the first subcell comprises a base region, coupled to the substrate, an emitter region, and at least one dual heterojunction, coupled between the base region and the emitter region, wherein the at least one dual heterojunction has a lower bandgap than the emitter region.
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公开(公告)号：US09985160B2
公开(公告)日：2018-05-29
申请号：US13619625
申请日：2012-09-14
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/078 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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3.发明申请公开(公告)号：US20140076387A1
公开(公告)日：2014-03-20
申请号：US13617316
申请日：2012-09-14
IPC分类号： H01L31/0264 , H01L31/06
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
摘要翻译： 公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，其中至少第一层包括IV族半导体，其中部分电池包括第三层，其包含III-V 具有与第一层的IV族半导体不同的组成的半导体或IV族半导体，使得在第一层和第二层之间形成异质结构。
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公开(公告)号：US20120285524A1
公开(公告)日：2012-11-15
申请号：US13555725
申请日：2012-07-23
IPC分类号： H01L31/0725
CPC分类号： H01L31/0687 , H01L31/0735 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
摘要翻译： 太阳能电池包括具有第一层晶格参数的第一层，具有不同于第一层晶格参数的第二层晶格参数的第二层，其中第二层包括光活性第二层材料; 以及具有与所述第二层晶格参数不同的第三层晶格参数的第三层，其中所述第三层包括光活性第三层材料。 透明缓冲层在第二层和第三层之间延伸并接触第二层和第三层，并且具有随着从第二层朝向第三层的距离的增加而变化的缓冲层晶格参数，以便与第二层和第三层的晶格匹配 层。 在太阳能电池中可能存在附加的子电池层和缓冲层。
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公开(公告)号：US20120031478A1
公开(公告)日：2012-02-09
申请号：US12852574
申请日：2010-08-09
IPC分类号： H01L31/109
CPC分类号： H01L31/0735 , H01L31/072 , H01L31/0725 , Y02E10/544
摘要： A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.
摘要翻译： 一种太阳能电池，包括具有第一带隙的基底半导体层，具有第二带隙的发射极半导体层和位于所述基底半导体层和所述发射极半导体层之间的耗尽半导体层，所述耗尽半导体层具有第三带隙，其中所述第三带隙 带隙大于第一带隙和第二带隙。
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公开(公告)号：US11646388B2
公开(公告)日：2023-05-09
申请号：US13616933
申请日：2012-09-14
IPC分类号： H01L31/078 , H01L31/0725 , H01L31/074 , H01L31/0443 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/078 , H01L31/0443 , H01L31/0687 , H01L31/074 , H01L31/0725 , H01L31/0745 , Y02E10/544 , Y02P70/50
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least one layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US10566485B2
公开(公告)日：2020-02-18
申请号：US13555725
申请日：2012-07-23
IPC分类号： H01L31/00 , H01L31/0687 , H01L31/18 , H01L31/0735
摘要： A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
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公开(公告)号：US09178098B2
公开(公告)日：2015-11-03
申请号：US13407924
申请日：2012-02-29
IPC分类号： H01L31/02 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L31/0693
CPC分类号： H01L31/1844 , H01L31/0304 , H01L31/03042 , H01L31/0687 , H01L31/0693 , H01L31/0735 , Y02E10/544
摘要： A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.
摘要翻译： 一种太阳能电池，包括位于基极区域和背面场层之间的基极区域，背面场层和δ掺杂层。
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9.发明申请GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES 审中-公开使用IV组或III-V组织的第IV组太阳能电池结构公开(公告)号：US20140076401A1
公开(公告)日：2014-03-20
申请号：US13617566
申请日：2012-09-14
IPC分类号： H01L31/0264 , H01L31/06
CPC分类号： H01L31/078 , H01L31/0687 , H01L31/0725 , H01L31/074 , H01L31/0745 , Y02E10/544 , Y02P70/521
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
摘要翻译： 公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，其中至少第一层包含IV族半导体，其中该部分电池包括第二层，该第二层包含III- V半导体或具有与第一层的IV族半导体不同的组成的IV族半导体，使得在第一层和第二层之间形成异质结构。
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公开(公告)号：US20140076391A1
公开(公告)日：2014-03-20
申请号：US13619625
申请日：2012-09-14
IPC分类号： H01L31/06
CPC分类号： H01L31/0725 , H01L31/0687 , H01L31/074 , H01L31/0745 , H01L31/078 , Y02E10/544
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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