Invention Grant
- Patent Title: Direct extreme ultraviolet lithography on hard mask with reverse tone
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Application No.: US16253429Application Date: 2019-01-22
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Publication No.: US11501969B2Publication Date: 2022-11-15
- Inventor: Yann Mignot , Yongan Xu , Ekmini Anuja De Silva , Ashim Dutta , Chi-Chun Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Abdy Raissinia
- Main IPC: H01L21/033
- IPC: H01L21/033
Abstract:
A method of making a semiconductor device includes depositing an oxide material on a patterned mask arranged on a substrate. The method further includes removing a portion of the oxide material such that the patterned mask is exposed. The method also includes removing the patterned mask such that the substrate is exposed between areas of remaining oxide material.
Public/Granted literature
- US20200234957A1 DIRECT EXTREME ULTRAVIOLET LITHOGRAPHY ON HARD MASK WITH REVERSE TONE Public/Granted day:2020-07-23
Information query
IPC分类:
