Invention Grant
- Patent Title: Devices including stair step structures adjacent substantially planar, vertically extending surfaces of a stack structure
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Application No.: US16676817Application Date: 2019-11-07
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Publication No.: US11508742B2Publication Date: 2022-11-22
- Inventor: Troy R. Sorensen , Mohd Kamran Akhtar
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/11548
- IPC: H01L27/11548 ; H01L23/528 ; H01L23/522 ; H01L27/11556 ; H01L27/11582 ; H01L27/11575 ; H01L21/311 ; H01L21/768
Abstract:
A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.
Public/Granted literature
- US1249685A Automatic train-stop. Public/Granted day:1917-12-11
Information query
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