公开(公告)号：US20230077163A1

公开(公告)日：2023-03-09

申请号：US18050431

申请日：2022-10-27

Applicant: Micron Technology, Inc.

Inventor： Troy R. Sorensen ,  Mohd Kamran Akhtar

IPC: H01L27/11548 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/311 ,  H01L21/768 ,  H01L27/11575

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.

公开(公告)号：US20250169069A1

公开(公告)日：2025-05-22

申请号：US19027756

申请日：2025-01-17

Applicant: Micron Technology, Inc.

Inventor： Troy R. Sorensen ,  Mohd Kamran Akhtar

IPC: H10B41/50 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H10B41/27 ,  H10B43/27 ,  H10B43/50

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.

公开(公告)号：US20180082940A1

公开(公告)日：2018-03-22

申请号：US15271924

申请日：2016-09-21

Applicant: Micron Technology, Inc.

Inventor： Troy R. Sorensen ,  Mohd Kamran Akhtar

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/115 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.

公开(公告)号：US11508742B2

公开(公告)日：2022-11-22

申请号：US16676817

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Troy R. Sorensen ,  Mohd Kamran Akhtar

IPC: H01L27/11548 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11575 ,  H01L21/311 ,  H01L21/768

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.