Invention Grant
- Patent Title: Majorana fermion quantum computing devices with charge sensing fabricated with ion implant methods
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Application No.: US16680078Application Date: 2019-11-11
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Publication No.: US11515460B2Publication Date: 2022-11-29
- Inventor: Steven J. Holmes , Devendra K. Sadana , Sean Hart , Ning Li , Stephen W. Bedell , Patryk Gumann
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Garg Law Firm, PLLC
- Agent Rakesh Garg; Erik Johnson
- Main IPC: H01L27/18
- IPC: H01L27/18 ; H01L39/10 ; H01L39/22

Abstract:
A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A reflectrometry wire comprising a second metal within the reflectrometry region is formed. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.
Public/Granted literature
- US20210143311A1 MAJORANA FERMION QUANTUM COMPUTING DEVICES WITH CHARGE SENSING FABRICATED WITH ION IMPLANT METHODS Public/Granted day:2021-05-13
Information query
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