Invention Grant
- Patent Title: Heterofullerene and n-type semiconductor film using same, and electronic device
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Application No.: US16635011Application Date: 2018-08-07
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Publication No.: US11518677B2Publication Date: 2022-12-06
- Inventor: Nobuyuki Matsuzawa , Masaru Sasago , Jun'ichi Naka
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2017-167296 20170831
- International Application: PCT/JP2018/029501 WO 20180807
- International Announcement: WO2019/044411 WO 20190307
- Main IPC: C01B32/156
- IPC: C01B32/156 ; H01L51/05 ; H01L51/52 ; H01L51/00 ; C01B32/152 ; B82Y30/00 ; B82Y40/00
Abstract:
Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.
Public/Granted literature
- US20200239313A1 HETEROFULLERENE AND N-TYPE SEMICONDUCTOR FILM USING SAME, AND ELECTRONIC DEVICE Public/Granted day:2020-07-30
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