公开(公告)号：US12133464B2

公开(公告)日：2024-10-29

申请号：US17265045

申请日：2019-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuyuki Matsuzawa ,  Hideyuki Arai ,  Masaru Sasago

IPC: C07D493/22 ,  C07D495/04 ,  C07D495/22 ,  C07D517/14 ,  H10K85/60 ,  H10K10/46

CPC classification number: H10K85/6576 ,  C07D493/22 ,  C07D495/04 ,  C07D495/22 ,  C07D517/14 ,  H10K85/657 ,  H10K85/6574 ,  H10K10/484

Abstract: To provide a fused hetero 5-membered ring molecule having further sufficiently high hole mobility. Disclosed is a fused hetero 5-membered ring molecule having, in one molecule, eight aromatic rings including three or five hetero 5-membered rings, and the eight aromatic rings having one or two naphthalene structures. The three or five hetero 5-membered rings are each independently selected from the group consisting of a thiophene ring, a selenophene ring, and a furan ring.

公开(公告)号：US12091421B2

公开(公告)日：2024-09-17

申请号：US17263715

申请日：2019-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuyuki Matsuzawa ,  Hideyuki Arai ,  Masaru Sasago

IPC: C07D495/14 ,  H10K10/46 ,  H10K85/60

CPC classification number: C07D495/14 ,  H10K10/466 ,  H10K85/6576

Abstract: To provide a fused thiophene molecule having further sufficiently high hole mobility. Disclosed is a fused thiophene molecule that has seven aromatic rings containing three thiophene rings in one molecule and in which the seven aromatic rings have one or two naphthalene structures. And, semiconductor devices including a layer using the fused thiophene molecule are disclosed.

公开(公告)号：US11031558B2

公开(公告)日：2021-06-08

申请号：US16635021

申请日：2018-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuyuki Matsuzawa ,  Masaru Sasago ,  Jun'ichi Naka

IPC: H01L51/00 ,  H01L51/05

Abstract: A p-type semiconductor film including heterofullerene having a further sufficiently high hole mobility is provided. The p-type semiconductor film contains heterofullerene in which n+r number (where n and r are both positive odd numbers) of carbon atoms constituting a fullerene are substituted by n number of boron atom or atoms and r number of nitrogen atom or atoms.

公开(公告)号：US11518677B2

公开(公告)日：2022-12-06

申请号：US16635011

申请日：2018-08-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Nobuyuki Matsuzawa ,  Masaru Sasago ,  Jun'ichi Naka

IPC: C01B32/156 ,  H01L51/05 ,  H01L51/52 ,  H01L51/00 ,  C01B32/152 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.